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2SB647, 2SB647A
Silicon PNP Epitaxial
REJ03G0648-0200 (Previous ADE-208-1025) Rev.2.00 Aug.10.2005
Application
* Low frequency power amplifier * Complementary pair with 2SD667/A
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 -120 -80 -5 -1 -2 0.9 150 -55 to +150 2SB647A -120 -100 -5 -1 -2 0.9 150 -55 to +150 Unit V V V A A W C C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SB647, 2SB647A
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 2SB647 Min Typ -120 -- -80 -5 -- 60 30 -- -- -- -- -- -- -- -- -- -- 140 Max -- -- -- -10 320 -- -1 -1.5 -- 2SB647A Min Typ Max -120 -- -- -100 -5 -- 60 30 -- -- -- -- -- -- -- -- -- -- 140 20 -- -- -10 200 -- -1 -1.5 -- -- V V MHz pF Unit V V V A Test conditions IC = -10 A, IE = 0 IC = -1 mA, RBE = IE = -10 A, IC = 0 VCB = -100 V, IE = 0 VCE = -5 V, 2 IC = -150 mA* VCE = -5 V, 2 IC = -500 mA* IC = -500 mA, 2 IB = -50 mA* VCE = -5 V, 2 IC = -150 mA* VCE = -5 V, IC = -150 mA VCB = -10 V, IE = 0 f = 1 MHz
Cob -- 20 -- -- Collector output capacitance Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows. 2. Pulse test B C D 2SB647 -- 100 to 200 160 to 320 2SB647A 60 to 120 100 to 200 --
Rev.2.00 Aug 10, 2005 page 2 of 5
2SB647, 2SB647A
Main Characteristics
Maximum Collector Dissipation Curve
Collector power dissipation PC (W)
1.2
Typical Output Characteristics -1.0
Collector current IC (A)
-0.8 -0.6 -0.4 -0.2
-120 0 -10 80 - -6 0
-4 0 - 30 2 0 - - 10 -5 -2
PC = 0.
0.8
0.4
-1
9W
-0.5mA
IB = 0
0
50
100
150
0
-2
-4
-6
-8
-10
Ambient Tmperature Ta (C)
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
600 VCE = -5 V Pulse
Typical Transfer Characteristics
-500 -200
DC current transfer ratio hFE
VCE = -5 V Pulse
500 400 300 200 100
Collector current IC (mA)
-100
5C
-50 -20 -10 -5 -2 -1 0 -0.2 -0.4
Ta = 7
25 -25
Ta = 75C
25 -25
-0.6
-0.8
-1.0
0 -1
-3
-10
-30
-100 -300 -1,000
Base to Emitter Voltage VBE (V) Saturation Voltage vs. Collector Current
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current
Gain bandwidth product fT (MHz)
240 200 160 120 80 40 0 -10 VCE = -5 V
-0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0
-1.2 -1.0
IC = 10 IB Pulse
-0.8 VBE(sat) Ta = -25C 25 75 -0.6 -0.4 -0.2 0 -1 Ta = 75C 25 -25 VCE(sat) -3 -10 -30 -100 -300 -1,000
-30
-100
-300
-1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SB647, 2SB647A
Collector Output Capacitance vs. Collector to Base Voltage
Collector output capacitance Cob (pF)
200 100 50 f = 1 MHz IE = 0
20 10 5
2 -1
-2
-5
-10
-20
-50 -100
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SB647, 2SB647A
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name TO-92 Mod / TO-92 ModV
MASS[Typ.] 0.35g
Unit: mm
4.8 0.4
3.8 0.4
0.65 0.1 0.75 Max 0.55 Max 0.60 Max
2.3 Max 0.7
10.1 Min
8.0 0.5
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SB647CTZ-E 2SB647DTZ-E 2SB647ABTZ-E 2SB647ACTZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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